Au / Si ( l l l ) and the Formation of Silicides at the Interface Examined by Spin - Resolved Photoemission

نویسنده

  • U. Heinzmann
چکیده

Au on Si(111) in the 1 x 1 structure for different coverages and in the ~/3 x ~/3R30 °, and the 5 x 1 reconstructions has been studied by means of spin-, angle-, and energy-resolved photoemission. The photoemission studies were performed at normal incidence of the circularly polarized light and normal electron emission. In addition to Auand Si-derived peaks other highly spin-polarized peaks are observed for a coverage of 8 Au layers grown at room temperature. In keeping with previous work these peaks are interpreted as silicide peaks. The spin polarization of these peaks gives clues concerning the levels involved in the silicide formation. For a coverage of 16 Au layers on Si(111) in the 1 x 1 structure the photoemission spectra are similar to the spectra of a Au(111) crystal, but also show a contribution of the silicide peaks. For lower coverages the spectra are nearly independent of the structure (1 x 1, ]/~ x V~R30 ° or 5 x 1) and already show peaks other than the pure Auand Si-derived peaks. The Auger signal, however, does not show contributions in addition to the pure Si signal.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Interface Engineering to Create a Strong Spin Filter Contact to Silicon

Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality. To date, the inherent chemical reactivity between EuO and Si has prevented a heteroepitaxial integration without significant contaminations of the interface with Eu silicides and Si oxides. We present a solution to this long-standin...

متن کامل

Photoemission measurements of Ultrathin SiO2 film at low take-off angles

The surface and interfacial analysis of silicon oxide film on silicon substrate is particularly crucial in the nano-electronic devices. For this purpose, series of experiments have been demonstrated to grow oxide film on Si (111) substrate. Then these films have been used to study the structure of the film by using X-ray photo emission spectroscopy (XPS) technique. The obtained results indicate...

متن کامل

Spin-split silicon states at step edges of Si(553)-Au

The quasi-one-dimensional Si(553)-Au surface is investigated with time-resolved two-photon photoemission and laser-based photoemission. Several occupied and unoccupied states inside and outside the bulk band gap of silicon were found near the center of the surface Brillouin zone. A nondispersing unoccupied state 0.62 eV above the Fermi level with a lifetime of 125 fs matches the spin-split sili...

متن کامل

محاسبه سطح مشترک (111)Pb/Si با استفاده از نظریه تابعی چگالی

  Work function and surface energy per unit area were calculated in the framework of density functional theory (DFT) with Linearized A ug mented Plane Wave Plus Local Orbital method in full potential for a clean symmetric slab of silicon containing two (top and bottom) surfaces. The surfaces were theoretically modeled using supercell technique by stacking a variety of silicon layers along (111)...

متن کامل

Potential positive MRI contrast agent based on PVP-grafted superparamagnetic iron oxide nanoparticles with various repetition times

Objective(s): The present study aimed to evaluate the capability of synthesized and modified superparamagnetic iron oxide nanoparticles (SPIONs) as the positive contrast agent in magnetic resonance imaging (MRI) by investigating the effect of repetition time (TR) on the MRI signal intensity. Materials and Methods: SPIONs were synthesized using the co-precipitation method, and their surfac...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2004